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| CMPT6427 NPN SILICON DARLINGTON TRANSISTOR Central DESCRIPTION: TM Semiconductor Corp. The CENTRAL SEMICONDUCTOR CMPT6427 type is a NPN Silicon Darlington Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring extremely high gain. Marking Code is C1V. SOT-23 CASE MAXIMUM RATINGS (TA=25oC) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD TJ,Tstg JA 40 40 12 500 350 -65 to +150 357 UNITS V V V mA mW oC oC/W ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) SYMBOL ICBO ICEO IEBO BVCBO BVCEO BVEBO VCE(SAT) VCE(SAT) VBE(SAT) VBE(ON) hFE hFE hFE fT TEST CONDITIONS VCB=30V VCE=25V VBE=10V IC=100A IC=10mA IE=10A IC=50mA, IB=0.5mA IC=500mA, IB=0.5mA IC=500mA, IB=0.5mA VCE=5.0V, IC=50mA VCE=5.0V, IC=10mA VCE=5.0V, IC=100mA VCE=5.0V, IC=500mA VCE=5.0V, IC=10mA, f=100MHz MIN MAX 50 1.0 50 UNITS nA A nA V V V V V V V 40 40 12 1.20 1.50 2.00 1.75 100K 200K 140K 10K 20K 14K 130 MHz 188 SYMBOL Cob Cib NF TEST CONDITIONS VCB=10V, IE=0, f=1.0MHz VBE=0.5V, IC=0, f=1.0MHz VCE=5.0V, IC=1.0mA, RS=100k, f=1.0kHz TO 15.7kHz MIN MAX 7.0 15 10 UNITS pF pF dB All dimensions in inches (mm). LEAD CODE: 1) BASE 2) EMITTER 3) COLLECTOR R2 189 |
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